Our research activities in materials and structures for memory applications started in 1996 with the development
of the low-energy ion-beam-synthesis (LE-IBS) technique in collaboration with Salford University (UK). Two-dimensional arrays of Si nanocrystals in thin gate dielectrics were demonstrated and further exploited in the fabrication of nanocrystal memories (NCMs). This activity was first supported by the EU project, FASEM (1997-2000). LE-IBS development with target the realization of non-volatile NCMs in an industrial environment has been conducted further within the framework of the EU project, NEON (2001-2004), in collaboration with the US implanter manufacturer, Axcelis.
In addition to our LE-IBS-NCM activities, major efforts have been devoted the last few years to novel NCMs alternatives
including: (a) Memory devices by Si+ irradiation through poly-Si/SiO2 gate stack, (b) Memory devices using
Ge-NCs produced by MBE, (c) hybrid silicon-organic and SiGe-organic memories; this last activity was conducted
within the framework of the EU project, FRACTURE (2001-2003), (d) Formation of Si NCs in thin SiO2 layers by Plasma
Immersion, (e) Wet oxidation of silicon nitride implanted with low-energy Si ions for ONO memory stacks, (f)
MOS structures with low-energy Ge-implanted thin gate oxides, (g) Proton radiation tolerance of nanocrystal memories, (h) Fabrication and characterization of SiO2 films with Si NCs obtained by stencil-masked LE-IBS, (i) Hybrid
organic thin film transistor by laser-induced-forward-transfer, (j) Fluorene-based cross-bar organic memory devices,
and (k) III-Nitrides quantum dots nanocrystal memories.